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1N5614GP thru 1N5622GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Medium-Switching Junction Rectifiers
0.034 (0.86) 0.028 (0.71) Dia.
DO-204AC (DO-15)
1.0 (25.4) min.
(R)
ted* ten Pa Features
Reverse Voltage 200 to 1000V Forward Current 1.0A
0.300 (7.6) 0.230 (5.8)
* Epoxy has UL Flammability Classification 94V-0 * High temperature metallurgically bonded construction * 1.0 ampere operation at TA=55C with no thermal runaway * Typical IR less than 0.1A * Cavity-free, glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
0.140 (3.6) 0.104 (2.6) Dia.
Mechanical Data
Case: JEDEC DO-204AC, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 oz., 0.4 g
Ratings at 25C ambient temperature unless otherwise specified.
1.0 (25.4) min.
Dimensions in inches and (millimeters)
* Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics
Parameter * Maximum repetitive peak reverse voltage Maximum RMS voltage * Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 55C * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) * Operating junction temperature range * Storage temperature range VRRM VRMS VDC IF(AV) IFSM RJA TJ TSTG 200 140 200
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP 400 280 400 600 420 600 1.0 50 45 -65 to +175 -65 to +175 800 560 800 1000 700 1000
Unit V V V A A C/W C C
Electrical Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
* Minimum reverse breakdown voltage at 50A * Maximum instantaneous forward voltage at 1.0A * Maximum DC reverse current at rated DC blocking voltage * Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Maximum junction capacitance at 12V, 1MHz TA = 25C TA = 100C TA = 200C
VBR VF IR
220
440
660 1.2 0.5 25 1500 2.0
880
1100
V V A s
trr CJ 45 35
25
20
15
pF
Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
Document Number 88520 11-Feb-02
www.vishay.com 1
1N5614GP thru 1N5622GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Average Forward Rectified Current (A)
Fig. 1 - Forward Current Derating Curve
1.0 50
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC method)
0.75
60 Hz Resistive or Inductive Load 0.375" (9.5mm) Lead length
40
30
0.5
20
0.25
10
0 25
0 50 75 100 125 150 175 1 10 100
Ambient Temperature (C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneous Forward Characteristics
Instantaneous Reverse Current (A) Instantaneous Forward Current (A)
10 10
Fig. 4 - Typical Reverse Characteristics
TJ = 150C 1 TJ = 25C
TJ = 125C
1
0.1 Pulse Width = 300s 1% Duty Cycle 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
TJ = 75C
TJ = 25C 0.01 0 20 40 60 80 100
Instantaneous Forward Voltage (V)
Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
30
Junction Capacitance (pF)
TJ = 25C f = 1.0 MHz Vsig = 50m Vp-p 10
1 1 10 100
Reverse Voltage (V)
www.vishay.com 2 Document Number 88520 11-Feb-02

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